| 摘要 |
In a method for manufacturing a semiconductor device, a semiconductor wafer having a front surface with semiconductor elements and a back surface with no semiconductor elements is prepared, and the back surface of the semiconductor wafer is etched to form a first wall on the back surface of the semiconductor wafer in its periphery and a second wall of a grid configuration constructed by two stripes on the back surface of said semiconductor wafer within the first wall. The second wall is connected to the first wall.
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