METHOD OF FORMING WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a wiring of a semiconductor device is provided to reduce the resistance of a wiring and to minimize a phenomenon with a step being happened. CONSTITUTION: A tungsten film(12) is deposited on an upper portion of an insulated film(11)of a semiconductor substrate. A TiN or TiW film is deposited between the insulated film and the tungsten film as a barrier layer to improve a bonding characteristic of the insulated film and the tungsten film. The tungsten film is patterned through a lithographic process. The lithographic process comprises steps of applying a photoresist film on the upper portion of the tungsten film, and etching the exposed tungsten film. A aluminum film(13) is selectively deposited on the patterned tungsten. The step of depositing the aluminum film on the tungsten is achieved under the conditions of pressure of 0.5 to 10 Torr and temperature of 150 to 300 deg.C.