| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device by which minute crystal defects contained in a substrate or prescribed layer can be evaluated easily in a short time, by exposing conical etching residues caused by the crystal defects on the surface of the substrate or layer by performing anisotropic etching on the defects at a high selectivity ratio. SOLUTION: When a sample in which defects are formed as precipitation of oxygen by heat treatment is etched by anisotropic etching at a high selectivity ratio against SiO2, conical projections having the defects as precipitation of oxygen on their tops are formed as etching residues. When the number of the residues is counted by means of a data processor, particle counter, etc., under an optical microscope, the density of the defects as precipitation of oxygen in the etched sample can be found. At the time of evaluating defects as precipitation of oxygen formed in, for example, a silicon substrate or silicon film, the anisotropic etching is performed in the form of dry etching using a gas containing a halogen gas.
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