| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an integrated photodetector which has no deterioration in characteristics of a MOS transistor and has good photoelectric transfer efficiency. SOLUTION: This method includes a process, where a thermal oxide film 9 is formed on a photodetecting section 3c and a circuit drive section 4, a process wherein polycrystalline silicon 10 for the gate is deposited on the thermal oxide film 9, a process wherein the polycrystalline silicon 10 for the gate is etched except for the photodetecting section 3c and a gate section 8, a process where an interlayer insulating film 11 is formed between the polycrystalline silicon 10 for gate and the thermal oxide film 9 and the interlayer insulating layer 11 on the photodetecting section 3c is etched to the polycrystalline silicon 10 for the gate, a process where the polycrystalline silicon 10 for the gate 10 is etched to the thermal oxide film 9, a process where an oxygen treatment is applied from above the interlayer insulating layer 11 and the thermal oxide film 9, and a process wherein an insulating layer 12 is formed on the interlayer insulating layer 11 and the thermal oxide film 9 to form an antireflection film 13, constituted of the thermal oxide film 9 and the insulating layer 12 on the photodetecting section 3c.
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