发明名称 |
LITHOGRAPHY IMAGE FORMATION OF STRUCTURAL PATTERN TO ONE OR PLURAL FIELDS ON SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a particle beam lithography method for forming the images of structural patterns to one or plural fields on a substrate by charged particles, for example, ions. SOLUTION: The particle beams are shaped to a desired beam pattern by masks arranged within the particle beams and are converted to the beam patterns by the openings in the mask. These beam patterns are projected onto the substrate to form the images of the mask openings. The plural masks are arranged on one mask carrier and the plural opening patterns used for production of the structural patterns formed on the respective regions S of the substrate are provided according to this invention. The plural patterns formed in such a manner are all coupled and for example, an overall pattern of the die field D of the substrate 11 is formed.
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申请公布号 |
JP2000035674(A) |
申请公布日期 |
2000.02.02 |
申请号 |
JP19990164302 |
申请日期 |
1999.05.06 |
申请人 |
IMS IONEN MIKROFAB SYST GMBH |
发明人 |
BUSCHBECK HERBERT;CHALUPKA ALFRED DR;HAUGENEDER ERNST;LAMMER GERTRAUD;LOESCHNER HANS DR |
分类号 |
H01L21/027;G03F1/16;G03F1/20;G03F7/20;H01J37/09;H01J37/317;(IPC1-7):G03F7/20;G03F7/22 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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