| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method by which not only drop in the threshold voltage due to short-channel effect but also shortening of data holding time can be suppressed. SOLUTION: On the surface of a semiconductor substrate 1, gate electrodes 30, extending in a first direction and projecting sections each of which is arranged at a certain interval from each gate electrode 30, are formed in a second direction perpendicular to the first direction. In the surface layer of the substrate 1, impurity diffused regions 35 are formed on both sides of the gate electrodes 30 by adding an impurity to the regions. Then the ion of another impurity having conductivity opposite to that of the impurity diffused regions 35 is implanted into the surface layer of the substrate 1 in a direction oblique to the surface of the substrate 1 under such a condition that at least parts of the impurity diffusion regions 35 become the shadows of the projecting sections and part of the ions implanted from the side faces of the gate electrodes 30 reaches the regions of the surface layer of the substrate 1 below the gate electrodes 30. |
