SEMICONDUCTOR DEVICE AND METHOD THEREOF

摘要

PURPOSE: A semiconductor device and method thereof are provided to reduce a parasitic resistance and a parasitic capacitance by including a capacitor having high withstand voltage and high capacitance. CONSTITUTION: The semiconductor device having capacitors comprises a lower electrode(7) having an alumina thin film(8a) using a portion of a first metal layer(4) for forming a first metal wire on an interlayer dielectric(2a,2b) of a semiconductor substrate(1); an electrode(13a) using a portion of a second metal layer on the alumina thin film(8a) of the lower electrode; an upper electrode(17a) using a portion of a third metal layer(16) for forming a second metal wire on the electrode(13a) used as the upper electrode; a lead electrode(17b) connected to the lower electrode(7) using a portion of the third metal layer(16) by removing a portion of the alumina thin film(8a).