| 摘要 |
PROBLEM TO BE SOLVED: To decrease the number of photo-processes by merging a storage- electrode contact-hole forming process and a storage-electrode forming process, and to prevent the faulty array of a storage-electrode contact hole and a storage electrode. SOLUTION: A first insulating layer 108 is etched by using second substance layers and conductive-layer spacers 118 formed on a second insulating layer 112 as masks. Consequently, storage-electrode contact holes, second openings, having size relatively smaller than the size of first openings are formed. The first and second openings are filled with second conductive layers 120 such as polysilicon films, and the second conductive layers 120 and the second substance layers are etched to a flattened shape so that the upper surface of the second insulating layer 112 is exposed. When the second insulating layer 112 is removed by wet type etching, etc., self-alignment storage electrodes 122 are formed to the second openings as storage-electrode contact holes. |
