发明名称 Method for testing a memory device
摘要 A memory testing method for providing test patterns for a memory device is provided. First, the memory is divided into a plurality of blocks and a test pattern is applied to completely test a first block. Next, the first block is filled with all '1', and other blocks are filled with all '0'. Then, the first block is walked through the entire memory device to quickly test the memory and the function of the address decoder. The invention provides an efficient method for quickly and completely testing the semiconductor memory as well as detecting and locating all the address decoder faults. A method for selecting an optimal number for dividing a memory device into blocks is also presented to minimize the required test time.
申请公布号 US5954831(A) 申请公布日期 1999.09.21
申请号 US19970947264 申请日期 1997.10.08
申请人 ECTS INC. 发明人 CHANG, EDWARD C. M.
分类号 G01R31/28;G11C29/10;(IPC1-7):G11C29/00 主分类号 G01R31/28
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