| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and manufacture thereof wherein the function of an oxide dielectric is hardly lost. SOLUTION: A through-hole 28a reaching a lower electrode 27 is formed through an insulation film 28, a ferroelectric layer 30 is formed by, e.g., the sol-gel method, a part of the ferroelectric layer 30 other than the through-hole 28a is removed to form a ferroelectric part 31 by, e.g., the CMP method, a ferroelectric material is charged in the through-hole 28a to obtain a ferroelectric part 31 formed along the inner shape of the through-hole 28a. For this reason, the ferroelectric part 31 can be formed into a desired shape, without having to break due to etching, and hence lattice defects due to the etching of the ferroelectric (oxide dielectric) part 31 or reducing reaction can be avoided. |
