| 摘要 |
PROBLEM TO BE SOLVED: To form fine wiring of low resistance and improve productivity,by setting the temperature of developer in which glycerol is added at a specified value, and forming a resist pattern. SOLUTION: Gate wiring is constituted on a substrate in which a polycrystalline silicon film is formed via a gate insulating film. A resist pattern is formed on the gate wiring. The gate wiring and the resist pattern are used as masks, and a semiconductor region of a polycrystalline silicon film transistor array is formed by implanting ions in the polycrystalline silicon film. In this case, a resist film is formed on the gate wiring, and exposed in a specified pattern. In order to restrain dissolution of aluminum forming the gate wiring, developer containing dihydric alcohol or trihydric alcohol at 21 deg.C is used to dissolve an exposed part, and the resist pattern is formed. As a result, the film thinning amount of the resist film can be restrained, and imperfect etching can be prevented. |
