| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a sample high-temperature device by which the temperature of a sample can be increased up to a high temperature of 1500 deg.C or higher, desirably up to a high temperature of about 2000 deg.C. SOLUTION: A high-temperature device 1 changes the temperature of a sample S. The device 1 is provided with a cylindrical heater bobbin 4 which surrounds the sample S and a heater wire 12 which heats the heater bobbin 4. The heater bobbin 4 is formed of boron nitride(BN) or silicon carbide(SiC). The melting point of BN is at about 3000 deg.C, and the melting point of SiC is at about 2200 deg.C. As a result, the temperature of the sample S can be increased up to a high temperature of about 2000 deg.C without any problem.</p> |
