| 摘要 |
PROBLEM TO BE SOLVED: To efficiently treat gaseous chlorine used as etching gas in the production of a semiconductor by allowing chlorine- or chlorine compd.-contg. waste gas to react with hydrogen. SOLUTION: Chlorine- or chlorine compd.-contg. waste gas such as waste gas from a super-LSI etching device is made harmless by reaction with hydrogen. This reaction is effectively carried out in the presence of a catalyst contg. a component selected from among Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd, Ag, Ir, etc. In a removing apparatus 7, chlorine- or chlorine compd.-contg. waste gas 1 is heated with a preheater 2 and hydrogen 3 as a reducing agent is regulated to a prescribed flow rate and mixed with the waste gas 1 leaving the preheater 2. This gaseous mixture is supplied to a reactor 5, hydrogen chloride is formed by decomposition and the mixture is introduced into a hydrogen chloride treating tube 6, where the hydrogen chloride is removed with an adsorbent. |
