| 摘要 |
PROBLEM TO BE SOLVED: To control the amount of band discontinuity by making a semiconductor laser element include a layer comprising at least one of two specific compositions, in the semiconductor laser element at least part of the active region of which comprises a specific composition containing nitrogen. SOLUTION: A semiconductor laser element at least part of the active region of which comprises an Inx Ga1-x Asα N1-α layer (0<x, α<1) containing nitrogen includes a layer comprising at least one of an Inx 'Ga1-x '-y 'Aly 'Asα 'N layer (0<x', y', α'<1) and an Inx" Ga1-x" Asα" Pβ" N1-α"-β" layer (0<x", y", α", β"<1). In an in GaAlAsN mixed crystal base band structure, the conduction band changes in the manner of A'→B'→C' and the valence band is changed in the manner of D'→E'→F' by adding nitrogen to the InGaAlAs. The in GaAlAsN layer is obtained whose band gap is smaller than the band gap of an AlGaAs layer having a structure which has the same level of valence bend ΔEv and a small conduction and ΔEc , and is used for a quantum barrier layer to control the amount of band discontinuity ΔEc . |
