发明名称 |
Method of making an aluminum contact |
摘要 |
A method of forming aluminum contacts of submicron dimensions wherein, after formation of both vias and line openings in a silicon oxide layer, a metal stop layer is deposited, followed by deposition of aluminum. Alternatively, the metal stop layer is deposited prior to forming the vias and line openings. The excess aluminum is removed by chemical-mechanical polishing, the stop layer providing high selectivity to the chemical mechanical polishing. The stop layer is then removed. The resultant silicon oxide-aluminum surface is planar and undamaged by the chemical-mechanical polishing step.
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申请公布号 |
US5854140(A) |
申请公布日期 |
1998.12.29 |
申请号 |
US19960764382 |
申请日期 |
1996.12.13 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JASO, MARK A.;PALM, HERBERT;POETZLBERGER, HANS WERNER |
分类号 |
H01L23/52;H01L21/3205;H01L21/321;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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