| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing method by which chemical etching which is performed after annealing can be performed with an easily handlable etchant and the etching can be controlled accurately, and then, a semiconductor laser having an excellent temperature characteristic can be obtained by improving the activating ratio of a p-type clad layer with a high film quality. SOLUTION: A lower clad layer 2 composed of an AlGaInP compound semiconductor, an active layer 3, and a first upper clad layer 4 are epitaxially grown successively on a substrate 1 and a GaAs current constricting layer 6 is epitaxially grown on the layer 4. Then a second upper clad layer 7 composed of an AlGaInP compound semiconductor and a GaAs contact layer 8 are successively epitaxially grown on the layer 6 by performing annealing in a high vacuum of >=1×10<-4> at a arsenic partial pressure which is higher than the vapor pressure of arsenic and stripe-like chemical etching on the current constricting layer 6. |
