| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer highly intensified by specifying boron concentration in an n-type GaP single-crystal substrate of an epitaxial wafer for light-emitting semiconductor device, which is constituted by forming at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer on the n-type GaP single-crystal substrate. SOLUTION: There is a correlation between boron (B) concentration in an n-type GaP single-crystal substrate and brightness. On the n-type GaP single- crystal substrate 1 in which carrier concentration is uniform and B concentration is not, and n-type GaP epitaxial layer 2 and a p-type GaP epitaxial layer 3 are formed in the same process, to manufacture an epitaxial wafer. In the correlation between the luminance and the boron (B) concentration in the n-type GaP single-crystal substrate, B concentration is 1×10<17> cm<-3> or below, preferably 5×10<16> cm<-3> or below, and the epitaxial wafer of high luminance and less luminance variation is obtained. |
