| 摘要 |
An optical projection reduction system used in photolithography for the manufacture of semiconductor devices having a first mirror pair, a second field mirror pair, and a third mirror pair. Electromagnetic radiation from a reticle or mask is reflected by a first mirror pair to a second field mirror pair forming an intermediate image. A third mirror pair re-images the intermediate image to an image plane at a wafer. All six mirrors are spherical or aspheric and rotationally symmetrical about an optical axis. An annular ring field is obtained, a portion of which may be used in a step and scan photolithography system. In another embodiment, weak refracting elements are introduced to further reduce residual aberrations allowing a higher numerical aperture. In the catoptric embodiment of the present invention, a numerical aperture of 0.25 is obtained resulting in a working resolution of 0.03 microns with electromagnetic radiation having a wavelength of 13 nanometers. The optical projection reduction systems are intended for use at extreme ultraviolet to the soft X-ray wavelength range. The present invention, provides a relatively high numerical aperture and uses substantially all reflective elements, greatly facilitating the manufacture of semiconductor devices having feature sizes below 0.25 microns.
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