| 发明名称 |
MASK DEFECT DETECTION METHOD |
| 摘要 |
<p>PURPOSE:To make it possible to detect the defect of a metal layer composing a pattern before the formation of the photo-mask by scanning polarized light using a mask which is made by evaporating a metal layer on a silicon base plate.</p> |
| 申请公布号 |
JPS51148364(A) |
申请公布日期 |
1976.12.20 |
| 申请号 |
JP19750072573 |
申请日期 |
1975.06.14 |
| 申请人 |
FUJITSU LTD |
发明人 |
FURUKAWA YASUO |
| 分类号 |
H01L21/30;H01L21/027;H01L21/302;H01L21/66 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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