| 摘要 |
PROBLEM TO BE SOLVED: To stably produce transparent conductive coating relatively high in a specific resistance by prescribing the compsn. of a sputtering target. SOLUTION: This sputtering target is the one essentially composed of ZnO and contg. Ga and Y. By using this target, transparent conductive coating having relatively high specific resistance of 10<-1> to 10<10>Ωcm can stably be obtd. This is owing to the following reason. Ga in the coating or target partially or totally enters into a solid solution, works as a dopant and works so as to produce electrons having electric conductivity. Y in the coating reduces the concn. of a carrier and works, as an impurity scattering source, so as to reduce the mobility thereof. By this operation, the coating relatively high in specific resistance can be realized even in sputtering with a low oxygen concn. Preferably, the content of Ga is regulated to 0.2 to 8.0mol% expressed in terms of Ga1 O3 , and the content of Y is regulated to 0.2 to 60.0mol% expressed in terms of Y2O3 .
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