| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a PN junction having a steep concentration profile by a method wherein one conductivity type semiconductor region is formed by adding amphoteric impurities so as to form an inverse conductivity type semiconductor region by adding the same impurities or different impurities in the one conductivity type semiconductor region for the formation of a PN junction. SOLUTION: A P-type epitaxial layer 7 is formed by liquid epitaxial growing process on a semiinsulating gallium arsenic substrate 6. Next, an ion implanting mask such as photoresist, etc., is formed in a prospective MESFET forming region of the P-type epitaxial layer 7 for silicon ion implantation meeting a specific requirement. Next, after removing the photoresist, etc., the implanted ions are activating annealed by rapid annealing step so as to form an N-type implanted layer 8 and an N-type high concentration implanted layer 9 to be active layers. Later, a source electrode 10 and drain electrode 11 connecting to the N-type high concentration implanted layer 9 as well as a gate electrode 12 controlling the current flowing between the source and drain are to be formed.</p> |
