| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing a sintered silicon carbide having high purity at a low temperature without necessitating a high pressure in contrast with pressure sintering process. SOLUTION: A partial polycondensation product of a silicon alkoxide is hydrolyzed with a base catalyst in the presence of a solvent, an organic polymer and a salt, the produced sol is gelatinized and dried, the obtained dry gel is baked at 700-1,300 deg.C, a resin solution is impregnated in the resultant porous glass and the product is heated in an oxygen-free atmosphere at >=1450 deg.C after drying. |
