| 摘要 |
PROBLEM TO BE SOLVED: To restrict particles produced in etching, improve throughput, and hence simply form a large capacity capacitor by forming a storage electrode by burying polysilicon in a contact hole previously formed in an interlayer insulation film. SOLUTION: There is formed a contact hole composed in succession of a large diameter first contact hole 26 and a small diameter second contact hole 27 by etching a first BPSG film 7, a nitride film 23, and a second BPSG film 24 deposited on a semiconductor substrate 1 after a transistor is formed. A first doped polysilicon film is buried in the contact hole to form a storage electrode 12. Thereafter, an interlayer insulating film is deposited on the storage electrode 12 and is etched to form a third contact hole. A third doped polysilicon film 20 and a tungsten silicide film 21 are deposited on the interlayer insulating film and are buried also in the third contact hole to form a second wiring part 22 through etching. |
