| 摘要 |
<p>PURPOSE: To provide a manufacturing method for an electric field emission type element of high performance having an emitter tip having both a small curvature and a small vertical angle. CONSTITUTION: A first conductive film 11 to become a gate electrode and a first insulating film 12 are deposited on the surface of a substrate 10 and a recessed part 13 reaching the first conductive film 11 and having vertical side walls is formed on the first insulating film 12. A second insulating film 14 is deposited on the resulting substrate and side spacers 15 are formed in the side walls of the recessed part 13 by etching back the second insulating film. While using the side spacers 15 and the first insulating film 12 as a mask, the first conductive film 11 is selectively etched to form a pattern of a gate electrode. A third insulating film 16, which becomes an emitter shaping form, is so deposited as to cover the recessed part 13 and a second conductive film 18 is deposited on the film 16 to form an emitter. After that, of the third insulating film 16, at least the parts existing near the tip part of the emitter are selectively removed.</p> |
