发明名称 |
PRODUCTION OF LIQUID CRYSTAL DISPLAY SUBSTRATE, APPARATUS THEREFOR, METHOD FOR EVALUATING SEMICONDUCTOR CRYSTAL, PRODUCTION OF SEMICONDUCTOR CRYSTAL THIN FILM AND PRODUCTION DEVICE OF SEMICONDUCTOR CRYSTAL THIN FILM |
摘要 |
<p>PURPOSE: To make it possible to assure the good performance of driving circuit parts in a process for producing an LCD substrate by forming the driving circuit parts on amorphous semiconductor films formed on a glass substrate. CONSTITUTION: The amorphous silicon film 2 is formed by a reduced pressure CVD on the glass substrate 1. This amorphous silicon film 2 is irradiated with laser beams in an island form to polycrystallize the irradiated regions. In such a case, for example, each region is irradiated with the energy below the irradiation energy necessary for the polycrystallization and is then irradiated with the necessary energy. The band gap spectral reflectivity of the reflected light of the irradiated regions and the spectral reflectivity of a reference are compared and the energy is controlled while the progressing condition of the crystallization state is recognized by the degree of approximation thereof. The interior of the irradiated regions is thereafter subjected repeatedly to a film forming treatment and etching, by which the driving circuit parts consisting of the semiconductor elements are formed. For example, the wiring with a previously formed TFTs 5 is executed by the film forming treatment in this stage.</p> |
申请公布号 |
JPH08129189(A) |
申请公布日期 |
1996.05.21 |
申请号 |
JP19930311138 |
申请日期 |
1993.11.16 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
IMAHASHI KAZUNARI;HAMA KIICHI;HATA JIRO |
分类号 |
G02F1/1333;G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G02F1/136;G02F1/133 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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