| 摘要 |
PURPOSE: To enhance the reliability by reducing the junction leakage current passing through crystal defects regardless of short turn-around-time. CONSTITUTION: A drain, i.e., a diffusion layer 18, is formed up to a position deeper than the range of programming impurities 31 in an Si substrate 1 from the surface thereof. Consequently, generation of crystal defects 32 due to ion implantation is retarded at the junction of the diffusion layer 18 and the Si substrate 11. Consequently, even if the impurity ions 31 are implanted under a state where an Al wiring is formed and a heat treatment for eliminating the crystal defects 32 can not be carried out, the junction leakage current passing through the crystal defects 32 is reduced. |
