Metal-oxide-semiconductor field-effect transistor and its method of fabrication

摘要

The structural configuration of an improved submicron metal-oxide semiconductor field-effect transistor and the method of its fabrication are disclosed. A field oxidation procedure is employed to increase the thickness of the gate oxide layer at both of its ends. The result is decreased gate and drain overlapping region parasitic capacitance, as well as decreased gate-induced drain-leakage current, due to the reduction of the electric field intensity in the overlapping region at which the thickness is increased. The resulting metal-oxide semiconductor field-effect transistor, therefore, is provided with improved operating characteristics for use at high frequencies.