| 摘要 |
<p>PURPOSE:To provide a method for coating a reaction chamber of a CVD system by which the contamination of the reaction chamber by etching gas after the reaction chamber is cleaned is eliminated sufficiently. CONSTITUTION:In a method for coating a reaction chamber of a CVD system wherein after a thin film which attaches the inside of a reaction chamber of a plasma CVD system when a thin film is formed on a substrate by plasma discharging in the reaction chamber of the plasma CVD system is cleaned by plasma discharging of etching gas, the inside of the reaction chamber is coated with an insulating film or a semiconductor film by plasma discharging, a distance between electrodes 35, 36 for plasma discharging when the inside of the reaction chamber is coated with the insulating film or the semiconductor film is set larger than that when the thin film is formed on a substrate 1.</p> |
