| 摘要 |
<p>PURPOSE:To suppress dust minimum due to contact between a device and a wafer and position on a center of a wafer and an orientation flat in high precision and for a short period by a method wherein a rotation stage on which a wafer is placed is rotated and a rotation angle is detected at the specific two times and a rotation is stopped in a mean rotation angle location. CONSTITUTION:A wafer to be treated is placed on a rotation stage which can rotate round a rotation center P1. A specific one point P0 on a circumference centering the rotation center P1 and having the same diameter as the wafer to be treated is monitored while rotating a rotation stage, and a rotation angle from a reference location of the rotation stage is detected at the time when an edge of the wafer to be treated reaches the specific one point P0. Next, the rotation stage is further rotated and a rotation angle from a reference location of the rotation stage is detected at the time when an edge of the wafer to be treated is separated from the specific one point P0. Next, the rotation stage is rotated and stopped in a location in response to a mean rotation angle of previously detected first and second rotation angles.</p> |
