发明名称 |
Plasma vapor deposition apparatus |
摘要 |
A plasma vapor deposition apparatus which can form high-quality films of ITO, for example, with high productivity, includes a vapor deposition chamber, a drive and a horizontally rotating circular holding plate connected to the drive located in a lower portion of the chamber, the circular holding plate having a circular vapor source material mounting centered at the rotational axis about which the plate is rotated by the drive, and coil-shaped electrodes for exciting vapor produced by evaporating the vapor source material. A film thickness correcting plate is interposed between the holding plate and the path along which the substrate is transported through the chamber by a transporting device. This plate is configured to so shield a portion of the substrate so that an excess of excited vapor particles do not accumulate at a given site on the surface of the substrate. Moreover, independently evacuatable evacuating sections are provided upstream and downstream of the vapor deposition chamber to constitute a processing line. The transporting device transports the substrate continuously along a first path through the processing line from an inlet section to an outline section. On the other hand, a return mechanism returns the substrate from the outlet section to the inlet section along a second path disposed above the first path.
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申请公布号 |
US5474611(A) |
申请公布日期 |
1995.12.12 |
申请号 |
US19940292228 |
申请日期 |
1994.08.22 |
申请人 |
YOICHI MURAYAMA, SHINCRON CO., LTD.;C. ITOH FINE CHEMICAL CO., LTD. |
发明人 |
MURAYAMA, YOICHI;NARITA, TOSHIO |
分类号 |
C23C14/04;C23C14/24;C23C14/32;C23C14/56;(IPC1-7):C23C16/00 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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