发明名称 |
Method for growth of crystal. |
摘要 |
A method for growth of a crystal wherein a monocrystalline seed is arranged on a substrate and a monocrystal is permitted to grow with the seed as the originating point, comprises the step of: (1) providing a substrate having a surface of smaller nucleation density; (2) arranging on the surface of the substrate primary seeds having sufficiently fine surface area to be agglomerated; (3) applying heat treatment to the primary seeds to cause agglomeration to occur, thereby forming a monocrystalline seed with a controlled face orientation; and (4) applying crystal growth treatment to permit a monocrystal to grow with the monocrystalline seed as the originating point. l |
申请公布号 |
EP0306153(B1) |
申请公布日期 |
1995.03.22 |
申请号 |
EP19880307262 |
申请日期 |
1988.08.05 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YONEHARA, TAKAO;YAMAGATA, KENJI;NISHIGAKI, YUJI |
分类号 |
F16K7/04;C30B19/02;C30B19/12;C30B25/04;C30B25/06;C30B25/10;C30B25/18;C30B29/06;C30B29/08;C30B29/42;H01L21/20 |
主分类号 |
F16K7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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