发明名称 Method for growth of crystal.
摘要 A method for growth of a crystal wherein a monocrystalline seed is arranged on a substrate and a monocrystal is permitted to grow with the seed as the originating point, comprises the step of: (1) providing a substrate having a surface of smaller nucleation density; (2) arranging on the surface of the substrate primary seeds having sufficiently fine surface area to be agglomerated; (3) applying heat treatment to the primary seeds to cause agglomeration to occur, thereby forming a monocrystalline seed with a controlled face orientation; and (4) applying crystal growth treatment to permit a monocrystal to grow with the monocrystalline seed as the originating point. l
申请公布号 EP0306153(B1) 申请公布日期 1995.03.22
申请号 EP19880307262 申请日期 1988.08.05
申请人 CANON KABUSHIKI KAISHA 发明人 YONEHARA, TAKAO;YAMAGATA, KENJI;NISHIGAKI, YUJI
分类号 F16K7/04;C30B19/02;C30B19/12;C30B25/04;C30B25/06;C30B25/10;C30B25/18;C30B29/06;C30B29/08;C30B29/42;H01L21/20 主分类号 F16K7/04
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