| 摘要 |
In order to reduce a junction leakage current and obtain a shallow junction, ion implantation to form a doped region, such as an active region of a transistor, is followed by a low-temperature annealing and pulsed laser irradiation. The annealing temperature and time of the low-temperature anneal are 600 DEG C. and one hour, for example. The subsequent pulsed laser irradiation is performed by a XeCl laser, for example, with irradiation energy of 700 mJ/cm2, and a pulse width of 44 nsec. This process can reduce the leakage current by effectively removing points defects around the junction, and enables activation without increasing the depth of the junction.
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