MANUFACTURE OF INTEGRATED CIRCUIT INCLUDING LINE-WIDTH CONTROL IN ETCHING

摘要

PURPOSE: To control the line width of a structure containing the layer of resist by minimizing the change in dimensions in the horizontal direction of the resist by etching a planarizing layer in plasma containing a constituent that is selected from a group that consists of oxygen, halogen, and hydrogen halide. CONSTITUTION: The selected part of a resist 9 is exposed, and the resist 9 is partially exposed. Then, a pattern is transferred to a planarizing layer 7 by etching. A figure shows a structure after the resist 9 and the planarizing layer 7 are subjected to pattern formation by etching. Plasma used for etching the planarizing layer 7 has at least one constituent selected from a group that consists of halogen and hydrogen halide and oxygen. For example, a constituent and hydrogen such as hydrogen halide have a concentration that is selected to minimize the change in the dimensions of the resist 9. The hydrogen halide is preferably hydrogen bromide.