LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD

摘要

PURPOSE:To obtain a light emitting element with an improved light emitting efficiency by taking out emission through GaAs substrate. CONSTITUTION:P-type Ga1-xInxAs layers 12 and 13 and n-type Ga1-xInxAs layer 14 are grown on GaAs substrate 11 overlappingly and the n-type Ga1-xInxAs layer 14 is divided into a plurality of islands by a groove 16 with a depth reaching the p-type Ga1-xInxAs layer 13. The rectification property of p-n junction 15 at the lower part of one of adjacent islands is eliminated, thus forming a current path. Current is fed to electrode 19a and 19b provided on the surface of each island to make forward current flow through the p-n junction 15 at the other island. Infrared rays generated near the p-n junction 15 are taken out through the GaAs crystalline substrate 11.