| 摘要 |
The temperature of a substrate, such as a semiconductor wafer, is controlled in the processing of the substrate, such as sputtering, etching, deposition, or the like. According to the present invention, an accurately controlled temperature environment may be achieved by measuring the temperature and emissivity of heat from the surface of the substrate being processed, remotely as well as on a real-time basis, and correcting the temperature to reflect the actual temperature according to the emissivity as measured.
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