| 摘要 |
<p>PURPOSE:To provide a non-volatile semiconductor memory which can electrically write and erase data and can read out an accurate discriminated value, even if degradation of a memory cell is advanced. CONSTITUTION:An output line in which a signal is outputted to a column switch circuit 106 side of a writing/erasing circuit 110 is also connected to a drain side of a dummy selector 108H, while driving voltage VCD from a column address decoder is supplied to the gate. And when writing/erasing operation for a memory cell 100c of a memory cell array 100 is performed, writing/erasing operation for a dummy cell 108i is simultaneously performed.</p> |
