| 摘要 |
PURPOSE:To provide a bonding wire which is useful for the manufacture of a high-reliability semiconductor device in which there is no danger that a continuity defect or the like is caused by a method wherein a wire bend after a bonding operation is made an extremely low level. CONSTITUTION:Au whose purity is 90% or higher is melted and cast. After that, a sample No.1 is wiredrawn to be a diameter of 26mum and sample No.2 is wiredrawn to be a diameter of 27mum. Before a final wiredrawing operation, the quality of the samples is adjusted so as to obtain a prescribed elongation percentage, the final wiredrawing operation (i.e., a skin path working operation) is performed, and an Au wire whose wire diameter is 25mum and whose elongation percentage is 4% is manufactured. In the sample No.1, a skin path working degree is set at 8.5%, and, in the sample No. 2, it is set at 14.3%. |
