| 摘要 |
PURPOSE: To avoid the reverse bias of a source and to guarantee a high drain. CONSTITUTION: This programmable read only memory device is equipped with anti-fuses 62 and 64 at drain nodes 56 and 58 of a field effect transistor. Programming is achieved by impressing a high voltage between the drain and gate of the transistor, and closing the anti-fuses 62 and 64. At other times, the transistor is closed. Thus, the problem of a source reverse bias is avoided by positioning the anti-fuses at the drain nodes opposite to the source nodes. |
