| 摘要 |
The MOS transistor comprising channel stoppers (13a, 13b) formed of a first polysilicon layer (1<st> POLY) to determine a channel width (W), and a gate electrode (14) formed of a second polysilicon layer (2<nd> POLY), wherein a bias voltage is applied to the channel stoppers (13a, 13b). In a charge detector having a source follower circuit with a drive MOS transistor and a load MOS transistor for converting a transferred signal charge into a signal voltage, the MOS transistor of the invention is used as the drive transistor, and its source output voltage is fed back as a bias voltage to the channel stoppers (13a, 13b), thereby minimizing both the DC bias variation in the output voltage of the source follower circuit and the nonuniformity in the conversion efficiency. <IMAGE> |
