Method for providing a faster ones voltage level restore operation in a DRAM

摘要

There is a DRAM which provides for a faster non-accessed memory cell ones voltage level refresh or restore process. Specifically, the DRAM does not shut down a digit line's voltage pull-up circuitry (PSA) during a write operation. By leaving on the PSA, the digit lines being pulled to a ones voltage level will continue to be pulled up during the write operation. Thus, digit line will reach the ones voltage level in a shorter time than if the PSA were turned off during the write operation.