| 摘要 |
PURPOSE:To surely relieve a memory group defective on standby due to a leakage current (standby failure) with another memory group in redundancy in a semiconductor memory device equipped with memory cell groups MG1,...MGN and selection circuits A1,...ANN which select one of the memory cell groups MG1,...MGN. CONSTITUTION:Fuses (switches) F1,..., FN are provided to power feed lines PWL1,...PWLN connected to memory cell groups MG1,...MGN. Overcurrent detection circuits 101,..., 10... which detect that the memory cell groups MG1,...MGN exceed a reference value in leakage current or not in a standby state and output detection signals which indicate the detection results concerned are provided, and signal holding circuit circuits 111,..., 11N, which receive and hold the detection signals concerned and prevent selection circuits A1...AN from selecting a specific memory cell group at a functional test when the detection signals indicate that the leakage current of a specific memory cell group is larger than a reference value, are provided. |
