发明名称 POLISHING METHOD OF SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To easily protect a cleavage plane at the outer circumference of a wafer by a method wherein cleavage planes of two semiconductor substrates are brought into close contact with each other and the substrates are pasted on a polishing plate and polished. CONSTITUTION:Cleavage planes 4 of two circular wafers 1a are brought into close contact with each other; the wafers are pasted on a polishing plate and polished. Two-inch wafers are used as the circular wafers 1a. In this state, the wafers are polished by 70mum by means of a lapping operation and by 30mum by means of a polishing, operation. Thereby, the cleavage planes 4 are protected easily and the cleavage planes 4 situated at outer circumferences of the wafers 1a can he protected easily.
申请公布号 JPH05291216(A) 申请公布日期 1993.11.05
申请号 JP19920090705 申请日期 1992.04.10
申请人 HITACHI CABLE LTD 发明人 ONISHI MASAYA;OZAWA MAKOTO;KOMATA CHIKAFUMI
分类号 B24B37/04;B24B37/30;H01L21/304;H01L21/68;H01L21/683 主分类号 B24B37/04
代理机构 代理人
主权项
地址