发明名称 |
METHOD OF MANUFACTURING A PLANAR BURIED HETEROJUNCTION LASER |
摘要 |
In a method of manufacturing a planar buried heterojunction laser, after etching to delimit a laser stripe in relief on a substrate, lateral layers to surround the stripe are formed by a non-selective growth method not only at the sides of the stripe but also above it to create a parasitic projection. This projection is then removed after separation from the substrate by selective attack of a lift-off stripe which was deposited for this purpose above the stripe prior to this etching. Passages are formed for the attack medium used for this purpose. The invention can be applied in particular to the manufacture of fiber optic transmission systems.
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申请公布号 |
US5215939(A) |
申请公布日期 |
1993.06.01 |
申请号 |
US19920832024 |
申请日期 |
1992.02.06 |
申请人 |
ALCATEL N.V. |
发明人 |
GOLDSTEIN, LEON;BONNEVIE, DOMINIQUE;BRILLOUET, FRANCOIS;POINGT, FRANCIS;LIEVIN, JEAN-LOUIS |
分类号 |
H01S5/00;H01S5/20;H01S5/227 |
主分类号 |
H01S5/00 |
代理机构 |
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主权项 |
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地址 |
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