| 摘要 |
PURPOSE:To provide a manufacturing method of an X-ray mask not requiring complex correction operation processing besides having an X-ray absorbor pattern near a resolution limit of an electron beam drawing technique in relation to the improvement of a manufacturing method of the X-ray mask. CONSTITUTION:An entitled X-ray mask is constituted so as to have a process of applying a positive type resist 1 having high resolution on a membrane 3 consisting of a light element in which an X-ray absorber selectively grows, a process for forming a superfine resist pattern by an electron beam exposure method, a process for forming a film, in which no X-ray absorber 4 selectively grows, on the membrane of a resist pattern opening part, a process exposing the membrane by a lift-off of the resist pattern and a process for selectively growing the X-ray absorber on the exposed membrane. |
