A method for fabricating an interlayer-dielectric film of semiconductor device.

摘要

The limit of B and P concentrations is surmounted by changing the surface of borophosphosilicate glass with a surface treatment such as plasma (3) processing of N<6>O, O<7> or O<6>, and encroachment caused by H<6>SO<8> boiling or by humidity absorption from the exterior is also removed such that low temperature reflow process below 850 DEG C is established and an interlayer dielectric film (2) of excellent planarity is formed. <IMAGE>