发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE: To prevent redundant cell array area from increasing by controlling access to a normal column according to a select signal selecting the column corresponding to a redunancy sense signal. CONSTITUTION: A normal column decoder NCD and a redundant column decoder RCD are provided and a defective normal memory cell is substituted for by a spare cell. At this time, a block selecting circuit BLS generates a block select signal for selecting a specific block corresponding to a row address RA. A redundancy sense circuit generates the redundancy sense signal actuating the substitution for the spare cell according to a column address matching a fuse circuit and the said block select signal. Then a redundancy selecting circuit RS selects a column to be replaced corresponding to the sense signal. Then a normal decoder control circuit NCD controls access to the normal column decoder NCD according to the redundancy signal, so redundant cell arrays RCA are prevented from increasing.</p>
申请公布号 JPH0528794(A) 申请公布日期 1993.02.05
申请号 JP19910288964 申请日期 1991.11.05
申请人 SAMSUNG ELECTRON CO LTD 发明人 CHIYOU KENJIYUN
分类号 G11C11/401;G11C29/00;G11C29/04 主分类号 G11C11/401
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