| 摘要 |
The field oxide forming method for device isolation comprises the steps of forming a base oxide (3) on a substrate (1), forming a oxinitride film (9) thereon by the high temperature and short time of nitridation, depositing a nitride film (4) on the oxinitride film (9) to apply an active mask onto the nitride film (4) by using a photoresist film (5), etching the nitride film (4) to remove the photoresist film (5), forming a field oxide (10) by using a field oxidation process to remove the nitride film (4) and base oxide film (3), and performing a general semiconductor processes to complete a oxinitridation LOCOS isolation cell, thereby reducing the bird beak length.
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