首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
A CARRIER RECOVERY METHOD AND APPARATUS HAVING AN ADJUSTABLE RESPONSE TIME DETERMINED BY CARRIER SIGNAL PARAMETERS
摘要
申请公布号
GB9211281(D0)
申请公布日期
1992.07.22
申请号
GB19920011281
申请日期
1992.05.28
申请人
MOTOROLA INC
发明人
分类号
H04B1/10;H04L27/227
主分类号
H04B1/10
代理机构
代理人
主权项
地址
您可能感兴趣的专利
METHOD TO FABRICATE QUANTUM DOT FIELD-EFFECT TRANSISTORS WITHOUT BIAS-STRESS EFFECT
THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY
Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the Same
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
ULTRAHIGH VOLTAGE RESISTOR, SEMICONDUCTOR DEVICE, AND THE MANUFACTURING METHOD THEREOF
ACTIVE MATRIX ORGANIC LIGHT-EMITTING DISPLAY AND DISPLAY APPARATUS
ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF
OLED DISPLAY DEVICE AND MANUFACTURE METHOD THEREOF
ORGANIC LUMINESCENCE DISPLAY AND METHOD OF MANUFACTURING THE SAME
INTEGRATED SCINTILLATOR GRID WITH PHOTODIODES
BACKSIDE ILLUMINATED IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR
UNIFORM JUNCTION FORMATION IN FINFETS
ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
MEMORY ARCHITECTURE OF ARRAY WITH SINGLE GATE MEMORY DEVICES
NON-VOLATILE PUSH-PULL NON-VOLATILE MEMORY CELL HAVING REDUCED OPERATION DISTURB AND PROCESS FOR MANUFACTURING SAME
Vertical ferroelectric memory device and a method for manufacturing thereof
LOW-DRIVE CURRENT FINFET STRUCTURE FOR IMPROVING CIRCUIT DENSITY OF RATIOED LOGIC IN SRAM DEVICES
PASSIVE DEVICE AND MANUFACTURING METHOD THEREOF
METHODS OF FORMING TUNEABLE TEMPERATURE COEFFICIENT FR EMBEDDED RESISTORS