| 摘要 |
PURPOSE:To correct an adjustable amount based on an uneven shape of a resist surface caused by a wafer mark, remove unnecessary noise light and enable highly accurate alignment between a wafer and an exposure device body by utilizing position information from a plurality of wafer marks having different line widths formed on a wafer surface. CONSTITUTION:A plurality of alignment marks Wa1 to Wa3 having different line widths W1 to W3 are formed on a wafer W surface, while resist is further applied on them and a recording means is provided where a relational expression between the line widths of the alignment marks Wa1 to Wa3 and an amount of shift of position measurement due to a change in a incident position of a light flux to an image sensing means 110 caused by an uneven shape of the resist surface is recorded. Images of the alignment marks Wa1 to Wa3 are formed on the image sensing means 110, position information of these images and the recorded relational expression are used to calculate difference in position caused by the unevenness of a resist lighting, and the difference is referred to so as to perform relative alignment of the wafer W and the image sensing means 110. |
