| 摘要 |
PURPOSE:To prevent the deformation of a resist near a small opening section by forming an opening section reducing the fluidization of the resist at the time of baking between a large opening section and the small opening section in a resist layer for an etching mask. CONSTITUTION:A resist layer 14 is formed onto an insulating film 12 covering the surface of a semiconductor substrate 10. A large opening section 14A, a small opening section 14B and a large number of opening sections 14C of reducing the fluidization of a resist positioned between these opening sections 14A and 14B are formed by executing exposure and developing treatment to the resist layer 14. Post-baking treatment is executed to the resist layer 14, and dry etching treatment using the resist layer 14 as a mask is conducted, thus shaping holes corresponding to the opening sections 14A-14C to the insulating film 12. Since the opening sections 14C are formed, the fluidization of the resist is reduced by the opening sections 14C in post-baking treatment, thus preventing the deformation of the resist near the opening section 14B. |
